SSF3018D feathers: id=80a bv=100v rdson=14mohm ? advanced trench process technology ? special designed for convertors and power controls ? high density cell design for ultra low rdson ? fully characterized avalanche voltage and current ? avalanche energy 100% test ? silikron semiconductor co. ltd. 2009.7.15 version: 1.0 page 1of5 absolute maximum ratings parameter max. unit s i d @t c =25 ? c continuous drain current,vgs@10v 80 i d @t c =100 ? c continuous d rain current,vgs@10v 70 i dm pulsed t a drain curren 320 p d @t c =25 ? c power dissipation 192 w linear derating factor 2.0 w / ? c v gs gate-to-source voltage 20 v e as single p rgy 460 ulse avalanche ene mj e re gy ar petitive avalanche ener tbd t j ?55 to +150 t stg operating junction and storage temperature range ? c therm ce parameter min. typ. max. units al resistan r jc junction-to-case ? 0.65 ? ? c/w ele ctrical characteris =25 ? c(unless otherwise cified . typ. ax. un test conditions tics @tj spe ) parameter min m its bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 11.6 14 m ? v gs =10v,i d =30a v gs(th) gate ltage v threshold vo 2.0 4.0 v ds =v gs ,i d =250 a g fs forward transconductance 33 55 ? s v ds =10v,i d =40a ? ? 1 v ds =100v,v gs =0v i dss drai ent n-to-source leakage curr ? ? 5 a v ds =100v, v gs =0v,t j =150 ? c gate-to-source forward leakage 200 ? ? v gs =20v i gss gate-to-source reverse leakage ? ? -200 na v gs =-20v q g total gate charge ? 60 ? q gs gate-to-source charge ? 21 ? nc i d =25 a v ds =0.5v dss description: the SSF3018D is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology increases the cell density and reduces the on-resistance; it s typical rdson can reduce to 11.6mohm. application: ? power switching application SSF3018D top view (to220)
SSF3018D q gd gate- arge v to-drain("miller") ch ? 15 ? gs =10v t d(on) turn-on delay time ? 31 ? t r rise time ? 54 ? t d(off) turn-off delay time ? 40 ? t f fall time ? 48 ? ns v v ds =0.5v dss i d =10a r g =15 ? gs =10v c iss input capacitance ? 3040 ? c s outp os ut capacitance ? 420 ? c rss reve ance pf f rse transfer capacit ? 90 ? v gs =0v v ds =25v =1.0mhz sourc ain rating parameter min. typ. max. units test conditions e-dr s and characteristics continuous source current. ? silikron semiconductor co. ltd. 2009.7.15 version: 1.0 page 2of5 i s ( body diode) ? ? 80 i sm p (b mosfet symbol showing p-n e. ulsed source current . ody diode) ? ? 320 a the integral reverse junction diod v sd 0a diode forward voltage ? ? 1.3 v t j =25 ? c,i s =3 ,v gs =0v t rr r 100 ? ns 0v, v gs =0v, everse recovery time i f =25a, v r =5 -di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is ne rn- ) gligible (tu on is dominated by ls + ld test circuit: gate charge eas test circuits: bv dss not es: t condition: l =0.3mh, id = 37a, vdd = 50v repetitive rating; pulse width limited by max junction temperature. tes pulse width 300 s; duty cycle 1.5% rg = 25 ??? starting tj = 25c
SSF3018D ? silikron semiconductor co. ltd. 2009.7.15 version: 1.0 page 3of5 switch time test circuit switch waveforms: input admittance capacitance on resistance vs. junction temperature on resistance vs. drain current
? silikron semiconductor co. ltd. 2009.7.15 version: 1.0 page 4of5 SSF3018D gate charge forward voltage drop of intrinsic diode output characteristics@25 drain current vs. case temperature maximum transient thermal impedance
SSF3018D to220 mechanical data: ? silikron semiconductor co. ltd. 2009.7.15 version: 1.0 page 5of5
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